MOS transistor play a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentiality during scaling beyond 32nm. Scaling down causes severe short channel effects which are diffic...

The recent developments of Carbon NanoTube Field Effect Transistor (CNTFET) technology indicate the perspective of the Nanoelectromechanical systems (NEMS). Carbon nanotubes (CNT) are ideal candidates for NEMS due to their chemical and physical structures, low masses and exceptional stiffness. Study of NEMS devices in the light of quantum mechanics requires understanding the interplay between t...

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared that existing binary is highly impressive. Recently, MVL have attracted significant attention for the design digital systems. Carbon nanotube field effect transistors (CNTFETs) shown great promise based circuits, due fact scalable threshold voltage CNTFETs can be utilized easily designs. In ad...

Multiple-Valued Logic systems present significant improvements in terms of energy consumption over binary logic systems. This paper proposes new ternary combinational digital circuits that reduce low-power nano-scale embedded and Internet Thing (IoT) devices to save their battery consumption. The 32 nm CNTFET-based half adder (THA) multiplier (TMUL) use novel unary operator implement two power ...

Carbon nanotube (CNT) has witnessed great importance due to its electronic and mechanical properties. The CNTFET was designed provide high-performance devices. Therefore, the carbon is representing a potential material for future microelectronic In this paper, COMSOL Multiphysics used design simulate single-walled field-effect transistor with back gate. insulation layer in model silicon dioxide...