The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a...

We report the observation of resonant tunneling effects a t high applied fields in a multiple quantum-well P-I-N diode. The A10,81no,5,As/Gao,4,1no,53As structure shows features in the dark current due to Zener tunneling of electrons from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.

We report effective mass (m*) measurements, via analyzing the temperature dependence of the Shubnikov-de Haas oscillations, for dilute, interacting, two-dimensional electron systems (2DESs) occupying a single conduction-band valley in AlAs quantum wells. When the 2DES is partially spin-polarized, m* is larger than its band value, consistent with previous results on various 2DESs. However, as we...

We investigate gallium and nitrogen vacancies in gallium nitride (GaN) bulk and nanowires using self-interaction corrected pseudopotentials (SIC). In particular, we examine the band structures to compare and contrast differences between the SIC results and standard density functional theory (DFT) results using a generalized gradient approximation (GGA) (Perdew et al 1996 Phys. Rev. Lett. 77 386...

— Reflectivity, fluorescence and photoelectron spectra from CaF2 single crystals hâve been measured using synchrotron radiation in the 10 to 100 eV range. The spectra contain features ascribed to excitons and to the band structure. Peaks due to conduction-band states derived from the 3d atomic levels are prominent in ail three

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT ...

We calculate the spectrum of three-photon absorption (3PA) in zinc blende semiconductors using Kane's four-band model. We apply this to ZnSe and measure the 3PA spectrum using femtosecond pulses, obtaining excellent agreement. The spectrum shows the apparent onset of 3PA from the split-off band and also shows quantum interference between the several possible evolution pathways when exciting car...

We use Brownian dynamics (BD) simulations to study the ionic conduction and valence selectivity of a generic electrostatic model of a biological ion channel as functions of the fixed charge Q(f) at its selectivity filter. We are thus able to reconcile the discrete calcium conduction bands recently revealed in our BD simulations, M0 (Q(f)=1e), M1 (3e), M2 (5e), with a set of sodium conduction ba...

Intense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity.