We report electrical and optoelectrical properties of a cross-junction of two semiconducting nanowires. Semiconducting nanowires and their junction play an important role in nanonetwork device. By mechanically manipulating the nanowires, cross-junction nanodevices are fabricated on SiO2/Si substrate using VO2 and ZnO nanowires. These junctions are formed across prepatterned two-probe Au electro...

Diameter tuning of [Formula: see text]-Ga2O3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga2O3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diame...

Crystalline boron nanowires were grown on Pt coated sapphire substrates using pulsed laser ablation at different temperatures under a pressure of 50 Pa. High-resolution TEM and transmission electron diffraction (TED) analyses were performed to determine the crystal structure of these nanowires. These nanowires had diameters ~100 nm and lengths in the micrometer range. Systematic analyses showed...

We report the growth of high density silicon Oxide (SiOx) nanowires at an elevated temperature. The nanowires density is enhanced by inserting a thin layer of chromium metal in gold/Si catalyst system. The SiOx nanowires were grown with gold/chromium catalysts stack layer on the Si substrate at different temperatures ranging from 1050oC to 1150oC. Under the catalysis reaction of the gold/chromi...

In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those ...

We introduce a continuum approach to studying the lifetimes of monovalent metal nanowires. By modelling the thermal fluctuations of cylindrical nanowires through the use of stochastic Ginzburg-Landau classical field theories, we construct a self-consistent approach to the fluctuation-induced “necking” of nanowires. Our theory provides quantitative estimates of the lifetimes for alkali metal nan...

Rationally controlled growth of inorganic semiconductor nanowires is important for their applications in nanoscale electronics and photonics. In this article, we discuss the rational growth, physical properties, and integration of nanowires based on the results from the authors' laboratory. The composition, diameter, growth position, and orientation of the nanowires are controlled based on the ...

A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm−3. Theoretical estimations and annealing experiments indicate that the nanowi...

Thermoelectric Properties of Bismuth Nanowires: Bismuth nanowires were electrochemically deposited in ion track-etched polymer membranes and their transport properties were studied. The Seebeck coefficients of single-and polycrystalline nanowires were measured as a function of wire diameter and temperature. For that purpose, a sample holder was designed that is capable of contacting nanowire ar...

In this paper, heterojunction nanowires of Ni-Se are fabricated via template-assisted electrodeposition process. Nanowires are characterized by scanning electron microscopy (SEM), Energy dispersive X-Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies. SEM photographs reveal the uniform and dense growth of Ni-Se nanowires. X-ray diffraction pattern shows the crystallin...