The realization of plasmo-electronic integrated circuits in a silicon chip will be enabled by two new plasmonic materials that are proposed and modeled in this article. The first is ion-implanted Si (n-type or p-type) at the surface of an intrinsic Si chip. The second is a thin-layer silicide such as Pd(2)Si, NiSi, PtSi(2) WSi(2) or CoSi(2) formed at the Si chip surface. For doping concentratio...

Coverage of ice velocities in the central part of the Southern Alps, New Zealand, is obtained from feature tracking using repeat optical imagery in 2002 and 2006. Precise orthorectification, co-registration and correlation is carried out using the freely available software COSI-Corr. This analysis, combined with short times between image acquisitions, has enabled velocities to be captured even ...

The synthesis of pectin-silica gels for controlled drug release in gastrointestinal tract (GIT) using low methoxyl (LM) and high methoxy (HM) pectins and tetraethoxysilane (TEOS) as precursor is described. The FTIR spectra of the pectin-silica gels show intense absorption bands at 1246cm-1 and 802cm-1 corresponding to the vibrations COSi bonds, which absent in the FTIR spectra of the native pec...

AIMS To estimate the financial cost to the NHS of infant crying and sleeping problems in the first 12 weeks of age and to assess the cost effectiveness of behavioural and educational interventions aimed at reducing infant crying and sleeping problems relative to usual services. METHODS A cost burden analysis and cost effectiveness analysis were conducted using data from the Crying Or Sleeping...

We describe and test a procedure to accurately co-register and correlate multi-temporal aerial images. We show that this procedure can be used to measure surface deformation, and explore the performance and limitations of the technique. The algorithms were implemented in a software package, COSI-Corr (available from the Caltech Tectonics Observatory website). The technique is validated on sever...

Characterization and modeling of high current conduction in Ti& and COSz films formed on n+ Si and n+ polySi under DC and pulsed stress conditions is reported for the first time. High current conductance of silicides is shown to be strongly affected by the technology and process conditions. The non-linear I-V characteristics of silicide films under DC and pulsed high current stress has been mod...