czochralski

It is debated in the silicon PV community whether or not presence of hydrogen essential for permanent suppression (“regeneration”) recombination activity boron–oxygen (BO) defect, which responsible light-induced degradation (LID) solar cells produced from B-doped oxygen-rich silicon. The BO-LID defect has been identified as a BsO2 complex negative-U properties. This study focuses on interaction...

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Diffusion of implanted nitrogen in silicon

2000

Lahir Shaik Adam Mark E. Law Kevin S. Jones Omer Dokumaci C. S. Murthy Suri Hegde

Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2 1 at a dose of 5310 ions/cm at 40 and 200 keV through a 50 Å screen oxide into Czochralski si...

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Total Dose Dependence of Oxide Charge, Interstrip Capacitance and Breakdown Behavior of sLHC Prototype Silicon Strip Detectors and Test Structures of the SMART Collaboration

2007

H. F.-W. Sadrozinski

Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures were manufactured on several high-resistivity substrates: ptype Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with Co gammas and the impact of surface radiation damage on the detec...

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