The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate t...

It is now well established that at a superconductor/ferromagnet (S/F) interface an unconventional superconducting state arises in which the pairing is odd-frequency. The hallmark signature of this superconducting state is generally understood to be an enhancement of the electronic density of states (DoS) at subgap energies close to the S/F interface. However, here we show that an odd frequency ...

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also c...

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the globa...

We report advance ab-initio computational results on the electronic structure and semiconducting properties of ZnTe which have been carried out using the first-principles tight-binding linear muffin-tin orbital method (TB-LMTO) within local density approximation (LDA). These theoretical calculations are performed to study the electronic band structures and other semiconductor’s properties like ...

The fundamental principle governing radiative transitions is Fermi’s golden rule [1], which states that, ignoring nonradiative pathways, the excited-state decay rate is directly proportional to the photonic density of states (DOS). The photonic DOS is simply the number of electromagnetic modes available for the emitted photons to couple into. This leads to the obvious conclusion that optical em...

We investigate the effect of Coulomb interactions on the tunneling density of states (DOS) of granular metallic systems at the onset of Coulomb blockade regime in two and three dimensions sd=2,3d. Using the renormalization group technique we derive the analytical expressions for the DOS as a function of temperature T and energy «. We show that samples with the bare intergranular tunneling condu...

Scanning tunneling spectroscopy (STS) enables the local, energy-resolved investigation of a samples surface density of states (DOS) by measuring the differential conductance (dI/dV) being approximately proportional to the DOS. It is popular to examine the electronic structure of elementary samples by acquiring dI/dV maps under constant current conditions. Here we demonstrate the intricacy of ST...

A highly efficient extrapolative Brillouin-zone integration scheme is presented that requires a very low k-point sampling density for spectral integrations. It is important to use an extrapolative approach, since at low sampling densities interpolative schemes are hindered by problems associated with band crossing, which introduce spurious singularities in the density of states ~DOS!. The infor...