Laser desorption/ionization from a single-crystal silicon surface was performed using a laser operating in the 3-microm region of the mid-infrared. Analyte molecules up to 6 kDa were ionized with no added matrix. As with ultraviolet desorption/ionization from porous silicon (DIOS), IR laser desorption from silicon does not produce matrix ions that can interfere with analysis of low-mass analyte...

We present a study on the kinetics of oxygen adsorption and desorption from single-wall carbon nanotube ~SWNT! and highly oriented pyrolytic graphite ~HOPG! samples. Thermal-desorption spectra for SWNT samples show a broad desorption feature peaked at 62 K, which is shifted to a significantly higher temperature than the low-coverage desorption feature on HOPG. The low-coverage O2 binding energy...

Static secondary ion mass spectrometry was used to study the corrosion inhibitor Irgamet®39 on the surface of copper treated in insulating oils and the effect of temperature changes, by means of temperature programmed desorption experiments under vacuum, on metal coverage. Four commercial oils, both corrosive and noncorrosive, showed no significant influence on the stability of the tolyltriazol...

The coadsorption of H 2 and D 2 on Ru(0001) has been studied by thermal programmed desorption. An inverse kinetic isotope effect comparing H2, HD and D 2 desorption has been observed with D 2 desorption being most rapid for temperatures above 350 K. This effect is attributed to a normal isotopic enhancement of H(ads) penetration into subsurface sites on Ru(0001) during the rapid temperature ris...

Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...

H. Kollmus1, M. Wengenroth1, Th. Hackler1, M. Bender1, D. Severin1, A. Krämer1, E. Mahner2, and H. Reich-Sprenger1 1GSI, Darmstadt, Germany; 2CERN, Geneva, Switzerland Ion induced desorption is a serious intensity limitation for high current, low charge state heavy ion accelerators like SIS18 and SIS100. Whereas room temperature desorption was intensively investigated in the last years [1, 2], ...

The photostimulated desorption yield of neutral halogen atoms from KI, KBr, and RbI at several temperatures has been measured in the photon energy range between 5 and 30 eV using synchrotron radiation and quadrupole mass spectrometry. The features observed in the desorption yield are slightly correlated with the structures of the absorption spectra of each investigated material. The behavior of...

Collision experiments between two different molecules both oriented with their axis are presented: The kinetics of the CO desorption and NO sticking probability by oriented NO has been investigated using supersonic molecular beam and work function techniques. The work function measurements exhibit mainly molecular adsorption of NO on a CO precovered Ni( 100) surface at T=300 K. The desorption a...

Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the hydrogen and silicon degrees of freedom during the desorption process. The calculations show that part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecules leave the surfa...