217 Abstract—As silicon devices shrink and their density increases, the low dielectric constant materials instead of SiO 2 film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at 300~500 ℃ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant u...

We have studied laser absorption, hot electron emission, and the energy spectrum of hot electrons produced during the interaction of a 150 fs, 5 mJ, 800 nm p-polarized laser pulse at 8x10(15) W/cm(2) with metallic and dielectric target materials. Because dielectric targets are much less conductive, the charge separation potential in dielectric targets is higher than that of metallic targets. Th...

Time-domain reflectometry (TDR) methods used for measuring the dielectric properties of materials mostly utilize step or needle electrical pulses of constant amplitudes and shapes. Our novel approach enables determining the dielectric relaxation time of a sample using the analysis of the amplitudes of reflected pulses of two widths, in addition to bulk dielectric permittivity and electrical con...

In this paper, the properties of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) composed of isotropic positive-index materials and epsilon-negative materials with pyrochlore lattices are theoretically investigated by a modified plane wave expansion method. The eigenvalue equations of calculating the band structures for such 3D PCs in the first irreducible Brillouin...

This paper describes the design and mode structure of resonators using Bragg confined modes. We investigate a range of low-loss dielectric materials with aim to maximize the Q-factor. The structure is composed of a hollow dielectric cylinder with the mode confined in the central low-loss region. We illustrate the importance of material permittivity and show it is possible to obtain a better Q-f...

As silicon devices keep shrinking in size while the circuits become more complex, they require low dielectric constant materials instead of silicon dioxide. SiOC films as low dielectric constant materials deposited by chemical vapor deposition were analyzed by Fourier transform infrared spectroscopy, elipsometry and nano-indentation to find the correlation between the dielectric constant and pr...

Understanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends o...

Dielectric constant and morphology of BaTiO3-polymer composite films were studied as a function of the filler concentration. The morphology of the films was examined using laser scanning confocal microscopy, which is capable to measure small particle distributions in more details than conventional microscopy. The thin-slice images allowed us to visualize the micronsize particles and the polymer...

Hematite (α-Fe(2)O(3)) constitutes one of the most promising semiconductor materials for the conversion of sunlight into chemical fuels by water splitting. Its inherent drawbacks related to the long penetration depth of light and poor charge carrier conductivity are being progressively overcome by employing nanostructuring strategies and improved catalysts. However, the physical-chemical mechan...

The bulk heterojunction (BHJ) organic photovoltaic (OPV) architecture has dominated the literature due to its ability to be implemented in devices with relatively high efficiency values. However, a simpler device architecture based on a single organic semiconductor (SS-OPV) offers several advantages: it obviates the need to control the highly system-dependent nanoscale BHJ morphology, and there...