Environmental stability studies for thin-film coating materials employed on the upgraded OMEGA laser system are essential for defining acceptable air humidity levels and their control, as well as for facilitating proper thin-film coating design of long-term-use OMEGA laser optics. Moisture penetration into porous, dielectric thin-film coatings causes generally undesirable changes in the film's ...

We report on C(60) based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene) (BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gat...

The bias-field-dependent dielectricity of ferroelectric thin films is studied by use of a multilayer model capable of modeling saturated and unsaturated hysteresis behavior under arbitrary fields. The simulated minor hysteresis loops at different bias fields are used to calculate the variation of dielectric permittivity with the bias field. The -E loops show asymmetric shifting along the field ...

In an atomically thin-film/dielectric-substrate heterostructure, the elemental physical properties of the atomically thin-film are influenced by the interaction between the thin-film and the substrate. In this article, utilizing monolayer MoS(2) on LaAlO(3) and SrTiO(3) substrates, as well as SiO2 and Gel-film as reference substrates similar to previously reported work [Nano Res, 2014, 7, 561],...

The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive nonlocal dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casim...

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We report on an empirically based physical model developed for small-molecule organic thin film transistors (OTFTs). The model is an extension of an adapted MOSFET model for hydrogenated amorphous silicon TFTs accounting for an arbitrary energy distribution of mobile and trap states and allows the extraction of the parameters from the measured device characteristics. Ideally all parameters can ...

We have studied effects of additive elements into the channel layers of amorphous IGZO TFTs on threshold voltage shift issues under light illumination stress condition. By addition of Hf or Si element, the Vth shift under light illumination and negative bias-temperature stress and illumination stress conditions was drastically suppressed while the switching operation of TFTs using IGZO with Mn ...

The effect of the active layer thickness (TIGZO) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (∆VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states-based simulator (DeAOTS). The NBIS-induced ∆VT in a-IGZO TFT with a thinner TIGZO is negatively larger than that in a-IGZO TFTs with a th...