The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the ...

Field ionization of high-n CH3I Rydberg states doped into argon is presented as a function of argon number density along the critical isotherm. These data exhibit a decrease in the argon induced shift of the dopant ionization energy near the critical point. We show that this decrease is due to the interaction between argon and the quasi-free electron arising from field ionization of the dopant....

Polysilicon depletion effects show a strong gate length dependence according to experimental p-channel MOS capacitance–voltage ( – ) data. The effect can be influenced not only by gate geometries, but also by dopant profiles in poly-gates. These effects have been modeled and verified using device simulation. Nonuniform dopant distributions in the vertical and lateral direction in the poly-gate ...

We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green’s function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the...

Rare earth (RE) Tb(3+)-doped high quality ZnSe nanocrystals (NCs) were synthesized by a facile chemical hot-injection method. ZnSe:Tb(3+) nanocrystals exhibited broadband absorption below the first excitonic absorption peak. Photoluminescence spectra showed Tb(3+) emission lines in the visible spectral window at room temperature when excited by UV radiation below the band-edge of the host ZnSe ...

The roughness of the electronic interfaces of p-n GaAs multilayers is investigated by cross-sectional scanning tunneling microscopy. Two physically different contributions to the roughness are found, both much larger than the underlying atomically sharp ‘‘metallurgical’’ interface. The roughness arises from the individual electrostatic screening fields around each dopant atom near the interface...

The randomness of dopant atom distributions in cuprate high-critical temperature superconductors has long been suspected to cause nanoscale electronic disorder. In the superconductor Bi2Sr2CaCu2O8+delta, we identified populations of atomic-scale impurity states whose spatial densities follow closely those of the oxygen dopant atoms. We found that the impurity-state locations are strongly correl...

This paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imaging under surface limited conditions, after the impact of grain boundaries is eliminated through an image processing procedure. By modeling the...

We have investigated the physical and optical properties of the left-handed chiral dopant ZLI-811 mixed in a nematic liquid crystal (LC) host BL006. The solubility of ZLI-811 in BL006 at room temperature is ~24 wt%, but can be enhanced by increasing the temperature. Consequently, the photonic band gap of the cholesteric liquid crystal (CLC) mixed with more than 24 wt% chiral dopant ZLI-811 is b...