Doping Mott insulators with charge causes dramatic changes in their physics. Spectacular results of the doping are superconductivity in cuprates and colossal magnetoresistivity in manganites. In all cases, doping is accompanied by mesoscopic phase separation that signalises that the magnetic short-range forces start to be competed by the long-range Coulomb force. The long range order is, theref...

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

Doping of YBa2Cu3O7-δ (YBCO) has become an effective means of increasing the flux pinning and critical current densities (Jc) in thin film superconductors, while maintaining the transition temperature (Tc). In previous research efforts, our group showed that doping (Y1xREx)BCO with typically deleterious rare earth (RE) elements can be used to improve the film’s current density via flux pinning ...

In this study, effect of sliver-doping on the crystal structure, the nanofibrous morphology and the photocatalytic activity of titanium oxide nanofibers have been investigated. Silver-doped TiO2 nanofibers having different silver contents were prepared by calcination of electrospun nanofiber mats consisting of silver nitrate, titanium isopropoxide and poly(vinyl acetate) at 600 C. The results a...

ZnO is a high melting point high charge carrier mobility semiconductor with potential as a thermoelectric material, but its high thermal conductivity is the limiting factor for increasing the thermoelectric figure of merit ZT. Here, we demonstrate that doping ZnO with heavy elements can significantly enhance ZT. Indium doping leads to ultralow κ~3 Wm-1K-1 and a high power factor α2σ~1.230×10-3 ...

The electronic properties of Te doped-ZnSb systems are investigated by first-principles calculations. We focus on the Zn(64)Sb(64-) (x)Te(x) systems (x = 0, 2, 3, 4), which respond to the 0, 1.56at%, 2.34at% and 3.12at% of Te doping concentration. We confirm that the amount of Te doping will change the conductivity type of ZnSb. In the cases of x = 2 and 3, we find that the Te element in ZnSb i...

Stable p-type conduction in ZnO has been a long time obstacle in utilizing its full potential such as in opto-electronic devices. We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concentration increases by 3 orders of magnitude, to ~3 × 1020 cm-3 as doping temperature increases to 1...

In this work, the fabrication and investigation of substituting higher-valence Mo6+ for Ti4+ ion on the B-site of La3+-doped Bi4Ti3O12 [BLT] structure to form Bi3.25La0.75(Ti1-xMox)3O12 [BLTM] (when x = 0, 0.01, 0.03, 0.05 0.07, 0.09, and 0.10) ceramics were carried out. X-ray diffraction patterns of BLTM ceramics indicated an orthorhombic structure with lattice distortion, especially with a hi...

Surface charge transfer is presented as an effective doping technique for III−V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) InAs on Si/SiO2 substrates. Experiments and sim...