Abstract The notion of a spin field effect transistor , where action is realized by manipulating the degree freedom charge carriers instead freedom, has captivated researchers for at least three decades. These transistors are typically implemented modulating orbit interaction in transistor’s channel with gate voltage, which causes gate-controlled precession current carriers, and that modulates ...

We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electr...

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

Investigations of Tunneling for Field Effect Transistors

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...