نتایج جستجو برای: effect transistor hjfet
تعداد نتایج: 1654265 فیلتر نتایج به سال:
Switched Biasing is presented as a technique for reducing the 1/f noise in MOSFETS. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its 1/f noise!! The history of the discovery of the effect and the main experimental results obtained so far will be reviewed. Keywords—1/f noise, noise reduction, CMOS, oscillators, phase noise.
We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...
Photodetectors in a configuration of field effect transistor were fabricated based on individual W18O49 nanowires. Evaluation of electrical transport behavior indicates that the W18O49 nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 104 was obtained, and the photoconductivity is ...
Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited...
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