For radical designs the hot-carrier reliability is an important issue. This creates the need for the numerical simulation of hot-carrier induced degradation. From a design point of view, the goal of the degradation simulation will be the hot-carrier aging simulation for the prediction of device lifetime. This simulation requires a complicated set of physical models, which includes the hot-carri...

InGaAsP grown by He plasma assisted Molecular Beam Epitaxy has a 15 ps carrier lifetime and a sharp band edge allowing for an ultrafast response and a strong optical nonlinearity at the telecommunications wavelength of 1.55 μm. S.D. Benjamin, Li Qian, J.E. Ehrlich, P.W.E. Smith, B.J. Robinson, D.A. Thompson Picosecond carrier lifetime in InGaAsP... 1 Picosecond Carrier Lifetime in InGaAsP Grown...

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo's theorem, under injection of localized surface domains and of bulk charge carriers. The bi...

Abstract: A physics-based explicit mathematical model for the external voltage-dependent forward dark current in bulk heterojunction (BHJ) organic solar cells is developed by considering Shockley-Read-Hall (SRH) recombination and solving the continuity equations for both electrons and holes. An analytical model for the external voltage-dependent photocurrent in BHJ organic solar cells is also p...

A new single-carrier sensor-less pulsewidth modulation (PWM) method using suggested pseudo reference functions is proposed for packed U-cell (PUC) converter to improve performance and reliability of the PUC converter. It composed one PWM carrier signal two functions. By employing method, dc capacitor voltage ripple substantially decreased, faster balancing obtained. Moreover, power losses are e...

Carrier lifetime measurements were performed on deliberately Ti-doped multicrystalline silicon wafers using a temperature controlled photoconductance device. The dominant recombination center was found to be the double-donor level associated with interstitial titanium. The interstitial Ti concentrations in multicrystalline silicon wafers were determined by measuring the Shockley– Read–Hall time...

We investigated the high-carrier screening of macroscopic polarization fields in GaN quantum wells (QWs) using a variational wave function for electrons and holes. In particular, we studied of the influence of free-carrier screening on the photoluminescence (PL) energy emission and carrier lifetime in the QW. We show that the energy transition between electrons and holes are explained well by t...

The photoexcited carrier lifetimes in ex situ-annealed low temperature growth GaAs are measured with a femtosecond transient absorption experiment. The study encompassed two low temperature growth GaAs films with approximately 0.3% and 0.9% excess arsenic incorporated during growth. The observed lifetimes are found to be a function of the spacing of arsenic precipitates formed during the 30 s a...