Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effect...

ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...

The effect of optical radiation on a uniformly doped nanoscale FinFET considering quantum mechanical effects has been theoretically examined and analyzed. The device characteristics are obtained from the self-consistent solution of 3D Poisson-Schrödinger equation using interpolating wavelet method. To our best knowledge this is the first approach for the self-consistent solution to surface pote...

Stationary random-access memory (SRAM) undergoes an expansion stage, to repel advanced process variation and support ultra-low power operation. Memories occupy more than 80% of the surface in today’s microdevices, this trend is expected continue. Metal oxide semiconductor field effect transistor (MOSFET) face a set difficulties, that results higher leakage current (Ileakage) at lower strategy c...