نتایج جستجو برای: ga 68
تعداد نتایج: 99083 فیلتر نتایج به سال:
Anisotropic strain relaxation in Ga,Mn As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurem...
Single-crystal structure refinements on lithium lanthanum zirconate (LLZO; Li7La3Zr2O12) substituted with gallium were successfully carried out in the cubic symmetry space group I [Formula: see text]3d. Gallium was found on two lithium sites as well as on the lanthanum position. Due to the structural distortion of the resulting Li6.43(2)Ga0.52(3)La2.67(4)Zr2O12 (Ga-LLZO) single crystals, a redu...
1. Robicsek A, Jacoby GA, Hooper DC. The worldwide emergence of plasmid-mediated quinolone resistance. Lancet Infect Dis 2006; 6: 629–40. 2. Archambault M, Petrov P, Hendriksen RS et al. Molecular characterization and occurrence of extended-spectrum beta-lactamase resistance genes among Salmonella enterica serovar Corvallis from Thailand, Bulgaria, and Denmark. Microb Drug Resist 2006; 12: 192–...
We report a simple strategy to construct a multiple gadolinium complex decorated fullerene (CGDn) as an enhanced T1 contrast agent. The CGDn exhibits much higher T1 relaxivity (∼49.7 mM(-1) s(-1)) than individual Gd-DOTA, and shows excellent T1 contrast enhancement ability both in vitro and in vivo.
The standard references for this section are [Gro91], [Kol90] and [McC91]. Let E be an elliptic curve over Q of conductor N . Let K = Q( √ −D), where −D is a fundamental discriminant, D #= 3, 4, and all prime factors of N are split in K, i.e. (N) = NN̄ for an ideal N of the ring of integers OK of K with OK/N $ Z/NZ. We call such a discriminant a Heegner discriminant for E/Q. By the modularity th...
We report a method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperatures using a vertical diffusion technique (VDT). The VDT is a deposition process for spin-coating binary and ternary oxide layers consecutively and annealing at once. With the VDT, uniform and dense quaternary oxide layers were fabricated at lower temperatures...
The title compound, 3C(10)H(8)N(4)·2C(7)H(6)O(5)·2CH(4)O, has a mol-ecular crystal structure which results from the cocrystallization of gallic acid (GA), 4,4'-azodipyridine (AzPy) and methanol in a 2:3:2 molar ratio. The asymmetric unit comprises one molecule each of GA, AzPy and methanol in general positions and half a molecule of AzPy as this is located about a centre of inversion. In the cr...
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of carefully prepared by molecular beam epitaxy GaN/Ga1-xMnxN/GaN(template) bilayers of various Mn concentration x. It is shown that the Fermi level in (Ga,Mn)N is strongly pinned in the middle of the band gap and the t...
Kolyvagin has shown how to study the Shafarevich-Tate group of elliptic curves over imaginary quadratic fields via Kolyvagin classes constructed from Heegner points. One way to produce explicit non-trivial elements of the Shafarevich-Tate group is by proving that a locally trivial Kolyvagin class is globally non-trivial, which is difficult in practice. We provide a method for testing whether an...
A europium(III) DOTA-tetraamide complex was designed as a MRI sensor of singlet oxygen ((1)O2). The water soluble, thermodynamically stable complex reacts rapidly with (1)O2 to form an endoperoxide derivative that results in an ∼3 ppm shift in the position of the Eu(III)-bound water chemical exchange saturation transfer (CEST) peak. The potential of using this probe to detect accumulation of th...
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