We have demonstrated that GaN can be grown epitaxially by atmospheric pressure metalorganic chemical vapor deposition on an aluminum oxide compound layer utilized as an intermediate layer between GaN and a Si~111!. X-ray diffraction measurement indicates that single-crystal hexagonal GaN with its basal plane parallel to the Si~111! plane is grown. Using a scanning electron microscope, the macro...

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...

We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current–voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongl...

Traditional Chinese medicine formulates treatment according to body constitution (BC) differentiation. Different constitutions have specific metabolic characteristics and different susceptibility to certain diseases. This study aimed to assess the characteristic genes of gan-shen Yin deficiency constitution in different diseases. Fifty primary liver cancer (PLC) patients, 94 hypertension (HBP) ...

Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates COLIN EDMUNDS, LIANG TANG, JIAYI SHAO, DONGHUI LI, GEOFF GARDNER, MICHAEL MANFRA, OANA MALIS, Purdue University, ANDREW GRIER, ZORAN IKONIC, PAUL HARRISON, University of Leeds, DIMITRI ZAKHAROV, Brookhaven Nation...

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process....

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Sakari Sintonen Name of the doctoral dissertation Synchrotron radiation x-ray topography of crystallographic defects in GaN Publisher School of Electrical Engineering Unit Department of Microand Nanosciences Series Aalto University publication series DOCTORAL DISSERTATIONS 187/2014 Field of research Nanotechnology Manuscript s...

Picosecond time-resolved photoluminescence ~PL! spectroscopy has been used to investigate the optical properties of GaN pyramids overgrown on hexagonal-patterned GaN~0001! epilayers on sapphire and silicon substrates with AlN buffer layers. We found that: ~i! the release of the biaxial compressive strain in GaN pyramids on GaN/AlN/sapphire substrate led to a 7 meV redshift of the spectral peak ...

In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standa...

Microwave GaN technology is now in production and poised to revolutionize many of today’s radar and communication systems. Simultaneously, mm-wave GaN processes are rapidly being matured to meet the growing needs of high power and efficiency, at higher frequencies. In this paper, we present an overview of GaN development, focusing on reliability and affordability for defense applications.