This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices achieve optimised parameters such as gain, power, better efficiency, and linearity compact size. In design with multiple stages, oscillations are co...

Abstract This study presents a method for designing highly efficient miniaturized power oscillator with gallium nitride high electron mobility transistor (GaN HEMT). A harmonic-tuning amplifier (PA) using GaN HEMT is designed firstly by finding optimal fundamental, 2nd and 3rd harmonic load impedances. After the performance of PA meets requirements, feedback circuit that made hairpin resonator ...

Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low pressure conventionally used precursor tris-cyclopentadienyl-scandium (Cp3Sc). It shown that electrical and structural characteristics AlScN/GaN heterostructure improve significantly using bis-methylcyclopentadienyl-scandiumchloride ((MCp)2ScCl), w...

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

This article deals with the nonlinear memory effects observed on both AM/AM and AM/PM conversions and swept frequency-separation two-tone intermodulation-distortion (IMD) tests made on microwave power-amplifier (PA) circuits. This study is theoretically introduced via an analytic Volterra series analysis, then complemented with large-signal harmonic balance and envelope simulations of a GaN HEM...

A rectangular-waveguide output UTC-PD module integrating a HEMT power amplifier has been developed for operation in the 125-GHz band. The fabricated module exhibits maximum output power of more than 14 dBm with nearly flat frequency dependence in the 115-135GHz range. A 10-Gbit/s error-free wireless transmission at 125GHz with a minimum sensitivity of −34 dBm for a bit-error-rate of 10−12 is al...

An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much i...

A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenom which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is fo...