The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistor...

In this paper, we address the epilayer design of the bipolar transistor using the one-dimensional (1-D) mixed-level simulator MAIDS (microwave active integral device simulator). MAIDS facilitates simulation of the electrical behavior of bipolar (hetero) junction transistors with various doping profiles and under different signal conditions in a realistic circuit environment. MAIDS as implemente...

An efficiency-enhanced fully integrated power amplifier (PA) for wireless local area networks (WLANs) was implemented based on the GaAs heterojunction bipolar transistor (HBT) process. A harmonic tuning network that can absorb parasitic inductance of bonding wires is proposed, which reduces chip significantly. The provides nearly optimum fundamental and second impedances from 5.0 to 5.5GHz. Add...

We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with record ${f}_{\mathrm {MAX}} =1.2$ THz, simultaneous {T}} =475$ GHz, and notation="LaTeX">$BV_{\mathrm {CEO}} =5.4$ V. The resulti...

A bipolar transistor structure is proposed having application for either high frequency operation or integration with certain types of light emitting devices. The structure involves liquid phase epitaxially grown layers of GaAs for the collector and base regions, and of Ga,_,Al,As for the heterojunction emitter. The high frequency potential of this device results primarily from the high electro...

A bandgap reference (BGR) and sub1V BGR circuits for Picowatt LSIs is proposed here. The circuits pertains pico-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The circuits neglect resistors and contain only MOSFETs and one bipolar transistor. As the sub-BGR circuit divides the output voltage of the bipolar transistor ...