Proton irradiation effects on strained Si 1.XGeX/Si heterostructures have been studied. For the experiment, p+-Sil -xGex/p--Si heterojunction diodes were fabricated by molecular beam epitax y (MBE) growth of strained p+boron doped SiGe layers on p -Si(100) substrates. Due to the valence band discontinuity between SiGe and Si layers, and degenerate doping in the SiGe layer, the characteristics o...

The energy-band alignments for zb-ZnSe(001)/a-Zn 3 P 2 (001), w-CdS(0001)/a-Zn 3 P 2 (001), and w-ZnO(0001)/a-Zn 3 P 2 (001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core l...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...

It is shown that LaTiO3, in superlattices with SrTiO3, is a strongly correlated metal rather than a Mott insulator. The tetragonal lattice geometry imposed by the SrTiO3 substrate leads to an increase of the Ti 3dt2g bandwidth and a reversal of the t2g crystal field relative to the orthorhombic bulk geometry. Using dynamical mean field theory based on finite-temperature multiband exact diagonal...

Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...

Z-scheme photocatalytic system has been regarded as a popular field of research in photoelectrochemical (PEC) water splitting. Among the many obstacles facing system, analysis methods interfacial charge transfer still remain significant challenge. Hence, this study, CdS/Ti-Fe 2 O 3 heterojunction photoanodes are elaborately designed to explore charge-transfer behavior PEC In photophysical measu...

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method" (2014).

This special issue spawned from mainly the motivation used by the scientific community in regard to potential applications of ZnO to electronic and optoelectronic devices which seemingly are centering about device applications already addressed by GaN to a large extent. The late Dr. Cole W. Litton (Fig. 1) successfully made the case that a small group of experts in both the GaN and ZnO communit...

We design optimal band pass filters for electrons in semiconductor heterostructures, under a uniform applied electric field. The inner cells are chosen to provide a desired transmission window. The outer cells are then designed to transform purely incoming or outgoing waves into Bloch states of the inner cells. The transfer matrix is interpreted as a conformal mapping in the complex plane, whic...