High-temperature threshold characteristics of a symmetrically graded -doped InAlAs/ InxGa1−xAs/GaAs x=0.5→0.65→0.5 metamorphic high electron mobility transistor MHEMT have been investigated. The thermal threshold coefficients, defined as Vth / T, are superiorly low at 0.9 mV/K from 300 to 420 K and at −0.75 mV/K from 420 to 500 K. An interesting polarity change of the thermal threshold coeffici...

One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, hole and electron field-effect mobility 7.6 345 cm2/Vs were measured in pTFT nTFT, respectively. These devices on SiO2 are enabling SoP crucial three-dimensional brain-mimicking integrated circ...

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/m...

The influence of surface chemical treatments and of deposition of a SiO2 surface passivation layer on carrier distributions and mobility in AlxGa12xN/GaN heterostructure field-effect-transistor epitaxial layer structures is investigated. Surface chemical treatments are found to exert little influence on carrier distribution and mobility. Deposition of a SiO2 surface passivation layer is found t...

In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 1...

The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by metalorganic chemical vapor deposition have been studied. Certain features of the 1/f noise have been revealed in these short-gate transistors. The low-frequency noise spectra show drastically different behavior depending on the gate voltage VG ...

This paper reviews recent work in the area of active metamaterials where transistors and circuitry are embedded within metamaterial structures for novel functions. In one function, embedding of psuedomorphic high electron mobility transistor (pHEMT) within the metamaterial resonator allows realization of a terahertz modulator. A variation of this approach utilizes diodes to modulate the metamat...

Although a great deal of progress has been made for metal-oxide-semiconductor fieldeffect transistors (MOSFETs) with high-k gate dielectrics, it has been experimentally observed that the effective mobility strongly degrades (1-3). The mechanism of the mobility degradation is not clearly understood so far. In order to explain the mobility degradation mechanism, there are several models proposed ...