In this article we study the ultrafast dynamics of excitons and charge carriers photogenerated in two-dimensional in-plane heterostructures, namely, CdSe-CdTe nanoplatelets. We combine transient absorption and two-dimensional electronic spectroscopy to study charge transfer and delocalization from a few tens of femtoseconds to several nanoseconds. In contrast with spherical nanocrystals, the re...

We present magnetoconductivity and magnetoluminescence measurements in sandwich devices made from films of a π-conjugated molecule and demonstrate effects of more than 30 and 50% magnitude, respectively, in fields of 100 mT at room-temperature. It has previously been recognized that the effect is caused by hyperfine coupling, and that it is phenomenologically similar to other magnetic field eff...

Binding energies of negative sX−d and positive trions sX+d in quantum wires are studied for strong quantum confinement of carriers which results in a numerical exactly solvable model. The relative electron and hole confinement have a strong effect on the stability of trions. For equal hole and electron confinement, X+ is more stable but a small imbalance of the particle confinement towards a st...

Photoconductivity is observed in ZnO epilayers due to photoexcitation in the visible spectral region of 400–700 nm, below the ZnO bandgap energy of 3.4 eV. Photoconductive transients due to visible photoexcitation have time constants in the order of minutes. Treatment of the ZnO surface with SiO2 passivation layers results in a significant reduction in the photoconductive signal and photoconduc...

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence ...

Non-radiative recombination plays an important role in the performance of optoelectronic semiconductor devices such as solar cells and light-emitting diodes. Most textbook examples assume that the recombination process occurs through a single defect level, where one electron and one hole are captured and recombined. Based on this simple picture, conventional wisdom is that only defect levels ne...

The recombination parameters of aluminium–oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several nand p-type intentionally Al-contaminated and control samples, using a single-level defect model. The presence of the control samples has allowed greater accuracy for the extraction of the recombination lifetime. The uncertainty ranges of the parameters have be...

The radiative and nonradiative components of the threshold current in 1.3 m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences...

The possibility of the formation an electron-hole liquid in type II heterostructures based on monolayers (bilayers) transition metal dichalcogenides is considered. It indicated that additional valleys conduction band, which are present bilayers, required for its observation. binding energy interlayer exciton found by variation method. An analytical formula shape recombination line liquid.

Field-Effect Passivation The implementation of Ga2O3 thin film effectively passivates the CZTS/TiO2 heterojunction by blocking holes away from buffer layer and acts as an electron-selective contact. This hole-blocking reduces interface recombination evident significant photoluminescence quenching. More information can be found in article number 2200001 Mukesh Kumar co-workers.