We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical r...

The crystal structure of pectate lyase C (EC 4.2.2.2) from the enterobacterium Erwinia chrysanthemi (PelC) has been refined by molecular dynamics techniques to a resolution of 2.2 A to an R factor of 17.97%. The final model consists of 352 of the total 353 amino acids and 114 solvent molecules. The root-mean-square deviation from ideality is 0.009 A for bond lengths and 1.768[deg] for bond angl...

Modeling of solar cell is a very difficult task. This is because of the non linear behavior of the cell. Different types of modeling for solar cells are available in the literature. The theme of the modeling is based on the solar radiation and temperature of the system and environment. Determination of cell parameters like Iph, Is, Rs ,Rsh and ideality factor generally affects the performance o...

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitan...

An alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function based model allows the terminal current to be expressed as an explicit analytical function of the applied terminal voltage, in contrast to the implicit-type conventional mu...

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

In this paper studies on Si/ZnO heterojunction diode is presented. In this work Zinc oxide (ZnO) was conformally deposited on Silicon (Si) Wafer by atomic layer deposition (ALD) technique without using a buffer layer. For low-temperature ALD deposition, diethyl zinc (DEZn) and deionized (DI) water were used as the sources for zinc and oxygen respectively. Surface characterization and optical ch...

A comprehensive experimental methodology based on analytical centrifugation is presented for the characterization of hydrodynamic non-ideality colloidal particles.

Aiming at identify the shortcomings of the available models for the description of the solid phase non-ideality, new solid liquid equilibrium data for multicomponent hydrocarbon systems was measured. The Predictive UNIQUAC and Wilson models for the description of the solid p d s m ©

Tungsten carbide (WC) contacts deposited on oxygenated diamond surface have shown great importance in the field of diamond-based Schottky diodes. In previous works, high temperature stability up to 600 K, an ideality factor close 1 with a Barrier Height (SBH) ~1.5 eV been demonstrated by electrical measurements. Annealing at higher lead deterioration contact behaviour terms SBH and factor. The ...