The market for power semiconductor modules is spreading not only to general-purpose inverters, servo motor drives, NC machine tools and elevators but also to new applications through the realization of electric vehicles and renewable energy systems. Fuji Electric has developed various power modules in response to market needs, and as the market expands in the future, the required performance fo...

A new half bridge gate driver IC for high voltage applications developed in high-voltage CMOS technology is described. It includes two driving stages able to source and sink 2A and 3A respectively: one driver is referenced to ground voltage, while the other may float up to 1200V above the former. The IC integrates the full digital section to interface a 3.3V controller and includes a set of fea...

Abstract Heat input and temperature field distribution in the welding process are crucial to quality. The parameters FSW optimized study influence of on a car Insulated Gate Bipolar Transistor(IGBT) liquid cooled radiator panel 6061T6 aluminum alloy under friction stir welding. This paper established with fully coupled thermo-mechanical model, explored thermal physical based JMATPRO. Then, rule...

This article studies the influence of fiber Bragg grating (FBG) head length on insulated gate bipolar transistor (IGBT) direct on-chip thermal sensing performance FBG sensors. To this end, surface a commercial IGBT chip is thermally simulated and experimentally characterized. Uniform sensors with three sizes are then tested in two promising locations. The study has found that large gradients ap...

<span lang="EN-US">In order to enhance electricity quality, a grid-connected photovoltaic (PV) system simulation is presented in this study. A 200 kW integrated utility grid and loads. 25 kV 3-level insulated gate bipolar transistor (IGBT) bridge converter used. Through integration of renewable energy source with non-renewable achieved. This also wins over the intermittent nature (solar e...

The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance influenced the driver control, operating points switching loop parasitics, which are crucial to their optimized operational behaviours, efficiency field reliability. This paper investigates controllability transient volta...

In this paper, a topology for cascaded multilevel converter based on multilevel modules and full-bridge converters is proposed. The proposed topology significantly reduces the number of dc voltage sources, IGBTs, and power diodes as the number of output voltage levels increases. Also, an algorithm to determine dc voltage sources magnitude is proposed to synthesize maximum levels at the output v...

Power SOI (Silicon-On-Insulator) devices have an inherent sandwich structure of MOS (MetalOxide-Semiconductor) gate which is very easy to suffer ESD (Electro-Static Discharge) overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor) were car...

The single-polysilicon non-self-aligned bipolar transistor in a 0.5-pm BiCMOS technology bas been converted into a double-polysilicon emitter-base self-aligned bipolar transistor with little increase in process complexity. Improved bipolar performance in the form of smaller base resistance and base-collector capacitance, larger knee current, higher peak cutoff frequency, and shorter ECL gate de...