نتایج جستجو برای: ion sensitive field effect transistors sensor

تعداد نتایج: 2870819  

2014
Ziyuan Tong Min-Ming Tong Wen Meng Meng Li

This paper introduces a new way to analyze mixtures of inflammable gases with a single catalytic sensor. The analysis technology was based on a new finding that an electric field on the catalytic sensor can change the output sensitivity of the sensor. The analysis of mixed inflammable gases results from processing the output signals obtained by adjusting the electric field parameter of the cata...

 In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ...

2011
WAN FAZLIDA HANIM ABDULLAH MASURI OTHMAN MOHD ALAUDIN MOHD ALI MD SHABIUL ISLAM Shah Alam

The ion-sensitive field-effect transistor (ISFET) that is designed to detect a specific ionic activity is susceptible to interfering ions in mixed-ion environments causing the sensor to produce deceptive signals. The objective of this work is to improve the interpretation of ISFET signals in mixed-ion environments. The focus of the research is relating sensor signal to the targeted ion concentr...

2012
Szu-I Hsieh Hsing-Yi Liang Chrong-Jung Lin Ya-Chin King Hung-Tse Chen

Related Articles Charge transport in dual-gate organic field-effect transistors APL: Org. Electron. Photonics 5, 20 (2012) Top-gate thin-film transistors based on GaN channel layer Appl. Phys. Lett. 100, 022111 (2012) Charge transport in dual-gate organic field-effect transistors Appl. Phys. Lett. 100, 023308 (2012) Solid polyelectrolyte-gated surface conductive diamond field effect transistors...

Journal: :Nano letters 2011
B N Szafranek D Schall M Otto D Neumaier H Kurz

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this...

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