نتایج جستجو برای: junctionless transistor

تعداد نتایج: 18841  

Journal: :Applied Physics Letters 2004

2004
D. Nadezhin

Progress in semiconductor process technology has made SO1 transistors ons of the most promising candidates for high pertormance and low power designs. With smaller diffusion capacitances, SO1 transistors switch significantly faster than their traditional hulk MOS counterparts and consume less power per switching. However, design and simulation of SO1 MOS circuits is more challenging due to more...

2001
Artur Wróblewski O. Schumecher Christian V. Schimpfle Josef A. Nossek

In this paper a method for choosing appropriate transistor topology for use with transistor sizing is presented. In combinatorial blocks of static CMOS circuits transistor sizing can be applied for delay balancing in order to guarantee synchronously arriving signal slopes at the input of logic gates. Since the delay of a logic gate depends directly on transistor sizes, the variation of channel-...

2001
Krzysztof S. Berezowski

In this paper, a new method of transistor chaining for 1-D automatic leaf cell synthesis is presented. The method allows synthesis of cells suitable for row-based layouts with no restrictions imposed on network topologies/transistor sizes. The novelty of the solution arises from transistor chaining with integrated dynamic transistor folding. We provide the theoretical analysis of transistor fol...

2016
Saswati Barman Susmita Saha Sucheta Mondal Dheeraj Kumar Anjan Barman

Development of all-magnetic transistor with favorable properties is an important step towards a new paradigm of all-magnetic computation. Recently, we showed such possibility in a Magnetic Vortex Transistor (MVT). Here, we demonstrate enhanced amplification in MVT achieved by introducing geometrical asymmetry in a three vortex sequence. The resulting asymmetry in core to core distance in the th...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

Mahmoud Mohammad-Taheri

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

Journal: :Advanced materials 2015
Roozbeh Abedini-Nassab Daniel Y Joh Melissa A Van Heest John S Yi Cody Baker Zohreh Taherifard David M Margolis J Victor Garcia Ashutosh Chilkoti David M Murdoch Benjamin B Yellen

The switching thresholds of magnetophoretic transistors for sorting cells in microfluidic environments are characterized. The transistor operating conditions require short 20-30 mA pulses of electrical current. By demonstrating both attractive and repulsive transistor modes, a single transistor architecture is used to implement the full write cycle for importing and exporting single cells in sp...

2014
Yi Song Xiuling Li

Articles you may be interested in Graphene nanopore field effect transistors Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Appl.

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید