نتایج جستجو برای: junctionless tunnel field effect transistor

تعداد نتایج: 2369586  

Journal: :Advances in transdisciplinary engineering 2022

This work examines the consequence of γ radioactivity on SOI-based Tunnel Field Effect Transistors & their use as radiation dosimeters. Extensive simulations have been carried out throughout study in order to examine creation e--h+ pairs oxide field predict device’s features from region where transistor operation around pinch-off voltage significant agglomeration area. It was found that pre...

2015
Teik-Hui Lee Chii-Dong Chen

The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, ...

Journal: :Silicon 2021

The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to so...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یزد 1387

چکیده ندارد.

Journal: :Nano letters 2015
P M Solomon B A Bryce M A Kuroda R Keech S Shetty T M Shaw M Copel L-W Hung A G Schrott C Armstrong M S Gordon K B Reuter T N Theis W Haensch S M Rossnagel H Miyazoe B G Elmegreen X-H Liu S Trolier-McKinstry G J Martyna D M Newns

The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...

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