With advances in the plasmonics and metamaterials research field, it has become more and more important to fabricate thin and smooth Au metal films in a reliable way. Here, by thin films we mean that their average height is below 10 nm and their average roughness is below 5% of the total thickness. In this article, we investigated the use of amino- and mercaptosilanes to increase the adhesion o...

In this paper, an exact analytical solution for free vibration of rotating bi-layered cylindrical shell composed of two independent functionally graded layers was presented. The thicknesses of the shell layers were assumed to be equal and constant. The material properties of the constituents of bi-layered FGM cylindrical shell were graded in the thickness direction of the layers of the shell ac...

We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency ...

Several theoretical models have been proposed to predict the behavior of photopolymers as holographic recording materials. Basically these models have been applied to study thin layers (around 100 microm thick). The increasing importance of holographic memories recorded in photopolymers (thickness of > 500 microm) makes it necessary to extend the ideas proposed by these models to study thick ph...

We have measured optical second-harmonic generation (SHG) from atomically thin samples of MoS2 and h-BN with one to five layers. We observe strong SHG from materials with odd layer thickness, for which a noncentrosymmetric structure is expected, while the centrosymmetric materials with even layer thickness do not yield appreciable SHG. SHG for materials with odd layer thickness was measured as ...

In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28) segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD). Measurements were performed with the interferometer illuminate...

Forward bias current–voltage characteristics (JD – V) were studied for both p – i – n ~superstrate! and n – i – p ~substrate! (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and different thickness i-layers. Contributions of the p/i interfaces to the JD – V characteristics were separated, and the dependence on the thickness of the i-layers was established. Equ...

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...

Atomic layer deposition (ALD) at this time is much slower than conventional optical thin-film deposition techniques. A more rapid ALD process for SiO(2) has been developed than for other ALD materials. A fence post design for optical thin films has thin layers of high-index posts standing above a broad low-index ground. If a design for ALD can be predominantly composed of SiO(2) layers with thi...

In this work a simple solid-on-solid (SOS) model of inhomogeneous films epitaxial growth is presented. The results of the computer simulations based on the random deposition (RD) enriched by a local relaxation which tends to maximize the number of a particle-particle lateral bonds (PPLB) against barriers blocking diffusion are presented. The influence of strength of the atoms interactions and b...