This current paper addresses the noncooperative distributed wireless relay networks under a jamming environment. The amplifyand-forward single-input multiple-output (SIMO) and multiple-input single-output (MISO) schemes are considered with multiple N-relay nodes. The main contribution of this paper is to determine the optimal relay precoder vectors by minimizing the minimum mean square error (M...

As the technology scales down to 90 nm and below, static random access memory (SRAM) standby leakage power is becoming one of the most critical concerns for low power applications. In this article, we review three major leakage current components of SRAM cells and also discuss some of the leakage current reduction techniques including body biasing, source biasing, dynamic VDD, negative word lin...

A multiple-antenna amplify-and-forward two-hop interference network with multiple links and multiple relays is considered. We optimize transmit precoders, receive decoders and relay AF matrices to maximize the achievable sum rate. Under per user and total relay sum power constraints, we propose an efficient algorithm to maximize the total signal to total interference plus noise ratio (TSTINR). ...

Leakage power consumption plays a significant role in current CMOS technology. International Technology Roadmap for semiconductors reports that leakage power consumption dominates the total chip power consumption as technology advances to nano scale. Most of the battery operated applications such as cell phones, Laptops etc requires a longer battery life, which can be made possible by controlli...

In this paper, we propose a leakage reduction technique. Because high leakage currents in deep submicron regimes are becoming a major contributor to total power dissipation of CMOS circuits. Sub threshold leakage current plays a very important role in power dissipation. So to reduce the sub threshold leakage current we proposed an adaptive voltage level (AVL) technique. Which optimize the overa...

The characteristics of dislocation-related leakage current paths in an AlGaN/GaN heterostructure grown by molecular-beam epitaxy and their mitigation by local surface modification have been investigated using conductive atomic force microscopy. When a voltage is applied between the tip in an atomic force microscope ~AFM! and the sample, a thin insulating layer is formed in the vicinity of the l...