نتایج جستجو برای: lightly doped drain and source ldds
تعداد نتایج: 16884870 فیلتر نتایج به سال:
Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, main obstacles development originate from small-sized single-crystal wafers instability electrical conductivity. This work presents a metal-oxide-semiconductor field-effect transistor (MOSFET) on diamond substrate derived five-inch (110) highly pre...
A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...
We performed electron spin and nuclear magnetic resonance and inelastic neutron scattering measurements of a single crystal of lightly hole-doped La1−xSrxCoO3, x ∼ 0.002 in order to establish the origin of a surprisingly strong magnetization due to a very small Sr doping. The data provide experimental evidence for the creation at low temperatures of extended spin clusters with a large spin mult...
Novel ground-state spin structures in undoped and lightly doped manganites are investigated based on the orbital-degenerate double-exchange model, via mean-field and numerical techniques. In undoped manganites, a new antiferromagnetic (AFM) state, called the E-type phase, is found adjacent in parameter space to the A-type AFM phase. Its structure is in agreement with recent experimental results...
Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron con...
Sr3(Ru(1-x)Mnx)2O7, in which 4d-Ru is substituted by the more localized 3d-Mn, is studied by x-ray dichroism and spin-resolved density functional theory. We find that Mn impurities do not exhibit the same 4+ valence of Ru, but act as 3+ acceptors; the extra eg electron occupies the in-plane 3d(x2-y2) orbital instead of the expected out-of-plane 3d(3z2-r2). We propose that the 3d-4d interplay, v...
We present a numerical treatment of a spin-orbital-polaron model for NaxCoO2 at small hole concentration (0.7 < x 1). We demonstrate how the polarons account for the peculiar magnetic properties of this layered compound: They explain the large susceptibility; their internal degrees of freedom lead both to a negative Curie-Weiss temperature and yet to a ferromagnetic intralayer interaction, ther...
In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...
We calculate low-frequency noise (LFN) in a quantum point contact (QPC) which is electrostatically defined in a 2D electron gas of a GaAs-AlGaAs heterostructure. The conventional source of LFN in such systems are scattering potentials fluctuating in time acting upon injected electrons. One can discriminate between potentials of different origin – noise may be caused by the externally applied ga...
In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage (Vth) adjustment using a carbon implant significantly improves the Vth mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occ...
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