نتایج جستجو برای: lpcvd
تعداد نتایج: 265 فیلتر نتایج به سال:
Low pressure chemical vapor deposition ~LPCVD! of silicon nitride from bis~tertiary-butylamino!silane ~BTBAS! and ammonia precursors has been demonstrated at 550-600°C in a 200 mm vertical batch furnace system. Deposition rates of 4-30 Å/min are achieved with a film thickness variation below 2% 1-sigma. Silicon nitride depositions using BTBAS and NH3 were found to retain a significant mass-tran...
Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Silane diluted in argon and ammonia were used as the reactant gasses, and the low temperature deposition at 570 °C was used. The films were deposited on silicon (111) substrates. Films with the different values of the nitrogen content were deposited by varying the ratio of the ...
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We concl...
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