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Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cr...

zno thin film of 80 nm thickness was deposited by the sol-gel spin coating method on sio2/si substrate and subsequently post-annealed at 500°c with a flow of oxygen for 60 min. crystallographic structure of the sample was characterized by x-ray diffraction (xrd) method while a field emission scanning electron microscope (fesem) was used to investigate the surface physical morphology and chemica...

double layer zno/sno2 thin film resistive gas sensors were fabricated by successive pvd of those oxides onto porcelain substrates. the metallic contacts were provided by electron beam evaporation of platinum onto substrates prior to deposition of the gas sensitive layers. deposits were thermally annealed at different temperatures. it was shown that the activation energy of electrical conduction...

The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implant...

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is ...

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This paper presents an investigation on titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film, which is used as sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. TiO2/ZnO thin films were deposited using sol-gel spin coating method on indium tin oxide (ITO) substrates. After the deposition, the bilayer films were annealed at constant temperatures ...

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-c...

ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2....