The class-E amplifier [1]-[11] is remarked as the next candidate of digital wireless power transmitters. Non-switching power amplifiers suffer from low power-conversion efficiency due to their inherent power loss in high back off area. Hence, switching power amplifiers such as class-D and E are remarked as a remedy for improving power-conversion efficiency and prolonging battery lifetime of por...

A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance fabricated phosphorus (P)-doped n-type body. N2 used fo...

This paper proposes a digital hardware control of Permanent Magnet Synchronous Motor (PMSM) using a SiC MOSFET inverter implemented in a FPGA (Field Programmable Gate Array) device. High frequency is required using a SiC MOSFET inverter to obtain high response and good stability for speed control systems. Not only the switching frequency of inverter, but also the control frequency is achieved u...

A health monitoring system (HMS) involving a blood extraction device with a new type of hybrid biosensor comprising an enzyme and a semiconductor has recently been developed. A MOSFET was used as the transducer. The gate electrode was extracted from the MOSFET using a cable. Gold (Au)-plate-immobilized glucose oxidase (Go) was used as a biosensor and attached to the gate electrode. Go was immob...

The Levenberg-Marquardt (LM) minimization algorithm commonly employed in MOSFET model parameter extraction has several known deficiencies, such as poor convergence characteristics without a good initial guess, low likelihood of convergence to the globally optimal solution, and difficulty with simultaneous multiobjective optimizations. Furthermore, conventional tools require an expert user with ...

A very wide tuning range MOSFET-C filter has been introduced. The wide tuning range in this filter has been achieved without using any switchable components or programmable building blocks, while, the cutoff frequency of the filter can be adjusted simply through a controlling bias current. The filter has a low-pass characteristics with fc = 20Hz to 184kHz while exhibiting a constant power consu...

Synchronous buck converters generate broadband noise typically in 50 – 300 MHz range due to the parasitic LC resonance in the switching loop which consists of input decoupling capacitors, high-side MOSFET and low-side MOSFET. Typically, this parasitic resonance is attenuated using an R-C snubber placed parallel to the low-side MOSFET. However, selection of the R and C value of the snubber is no...

Silicon carbide (SiC) based devices perform very well in severe environments and show excellent device characteristics at very high temperatures and in high radiation environments. An analytical model for a lateral MOSFET that includes the effects of temperature variation in 6H–SiC poly-type has been developed. The effects of elevated ambient and substrate temperatures (300–600 K) on the electr...

We propose a new lateral power metal-oxide semiconductor field-effect transistor (MOSFET) on InGaAs. The proposed structure is obtained by incorporating two trenches in the drift region of a standard power MOSFET structure. The modified device design provides reduction in electric field in the drift region leading to significant improvement in the device performance in terms of breakdown voltag...

Shallow trench isolation (STI) has become the most promising isolation scheme for ULSI applications. However, the trench isolation suffers from dislocations and oxidation induced stacking faults. Such faults are typically located near trench edges. These STI faults increase the junction leakage current and may turn-on the parasitic STI MOSFET resulting in significant leakage current through the...