In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide l...

In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our mod...

Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...

Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performa...

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In o...

A novel method was presented for the effective dose (ED) measurement with metal-oxide-semiconductor field-effect transistor (MOSFET) detectors in dual-energy (DE) dual-source (DS) computed tomography (CT) scanner. This study demonstrated that the mean energy of the combined spectrum in dual-source computed tomography can be used to measure the ED. For validation, the MOSFET dose at the centre c...

A reliable configuration for triggering a series string of power metal oxide semiconductor (MOS) devices without the use of transformer coupling is presented. A capacitor is inserted between the gate and ground of each metal oxide semiconductor field effect transistor (MOSFET), except for the bottom MOSFET in the stack. Using a single input voltage signal to trigger the bottom MOSFET, a voltage...

Silicon carbide (SiC) MOSFET has the potential to replace silicon (Si) IGBT due to its superior switching performance. However due to presence of parasitic inductance in converter layout, device voltage and current experience overshoots and oscillations during device switching. These undesired overshoots increase switching loss. In the context of these parasitic inductances, the performance of ...