After explaining the basic operation of a SiC JFET plus silicon MOSFET cascode circuit, the dynamics of cascode switching will be discussed and the use of a QRR tester to evaluate the reverse-recovery characteristics of a cascode circuit will be explained. A comparison of the cascode’s reverse recovery with that of a SiC MOSFET reveals that the JFET cascode actually performs better than the SiC...

The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedanc...

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBC...

We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theor...

Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating techno...

A new definition of MOSFET threshold voltage is proposed, namely, the “critical-current at linear-threshold” method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submic...

1 Gilgamesh Associates, Fletcher, Vermont, USA; [email protected]. 2 University of North Carolina/Charlotte, Charlotte, North Carolina, USA; [email protected]. 3 National Technological University of Athens, Zagraphou, Athens, Greece; [email protected]. Abstract – A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supe...

The potential impact of SiC devices on a wind generation system is explored by simulations in this work. The system modeling is explained in detail. Most recent SiC MOSFET prototypes are obtained, tested, and used to form a bi-directional converter in the simulation. The performance of the SiC converter is analyzed and compared to its Si counterpart at different temperatures and frequencies. A ...

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...

In this paper 3D electro-thermal FE Model using COMSOL Multiphysics software of power vertical MOSFET used in the automotive industry is presented. This model is used to analyze the effects of bonding wire lift off defect and to study the influence of metallization thickness and number of bonding wires on the electrical and thermal behavior of the power device. The maximum temperature enables t...