due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the I13/2 → I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE s...

in this research, the thin films of n-s doped titanium dioxide (tio2) were successfully prepared by simple sol-gel method in the presence of tetrabutylorthotitanate as a starting reagent. furthermore, titanium dioxide (tio2) was functionalized with thiourea. furthermore, n-s doped titanium dioxides (nsto) were fixed on glass balls by glass balls fixed-bed reactor system. besides, the effect of ...

objective(s): adsorption of immucillin-a (bcx4430) molecule on the pristine and n-doped tio2 anatase nanoparticles were studied using the density functional theory (dft) calculations. the adsorption energy analysis indicated that tio2+immucillin-a complexes including oc-substituted tio2 have higher adsorption energy than the complexes with ot substituted tio2, thus providing more stable configu...

A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...

The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic semiconductors (DMSs) and oxides, and later in (Ga,Mn)As materials has inspired a great deal of research interest in a field dubbed “spintronics” of late, which could pave the way to exploit spin in addition to charge in semiconductor devices. The main challenge for practical application of the DMS materials is the a...

Here we employ self-assembled Mg-doped GaN nanowires (NWs) grown by plasma assisted molecular beam epitaxy on Si(111) substrates to fabricate piezogenerators. We first discuss the fabrication and testing of rigid nanowire-based generators and then a flexible generator prototype is shown.

We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ~for Ga, Al, and Er! and a plasma gas source for N2. The emission spectrum of the GaN:Er...

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure meta...

The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observati...