The structural and electronic/optical properties of pure and Ag-N-codoped (8,0) ZnO nanotubes have been studied using first-principles calculations in the framework of the local spin density approximation. The configurations for Zn atoms replaced by Ag atoms are p-type semiconductor materials, and the bandgap increases when N atoms are doped into ZnO nanotube configurations. The optical studies...

Self-assembly (‘building’) approaches can provide well-controlled structures and assemblies at the nanometer scale, but typically do not provide the specific structures or functionalities required for robust nanoelectronic circuits. One approach to realize high-density nanoelectronic circuits is to combine self-assembly techniques with more conventional semiconductor device and circuit approach...

The electrode response of single crystal n-type Ti02 in acetonitrile was investigated with a large number of electroactive compounds differing widely in their standard potentials. The electrochemical behavior of various compounds can be used to investigate the band structure of the semiconductor electrode. This method is useful in detecting intermediate energy levels between the condubtion and ...

Solid solutions of CdS and CdSe of different compositions were prepared by s inter ing pressed pellets and vacuum evaporation. The bandgap of the mixtures varied monotonical ly with percent composition be tween that of CdS and CdSe. Studies of the photoassisted oxidation of sulfide with these electrodes wi th a 1M Na2S, 0.1M NaOH electrolyte showed that the flatband potentials (Vfb) of the mixt...

N-type semiconductor indium tin oxide (ITO) nanoparticles are used to effectively suppress the fluorescence blinking of single near-infrared-emitting CdSeTe/ZnS core/shell quantum dots (QDs), where the ITO could block the electron transfer from excited QDs to trap states and facilitate more rapid regeneration of neutral QDs by back electron transfer. The average blinking rate of QDs is signific...

Nanobelt structures have been fabricated for an n-type semiconductor molecule, N,N'-di(propoxyethyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI). The short alkyloxy side chain not only affords effective pi-pi stacking in polar solvents for self-assembling but also provides sufficient solubility in nonpolar solvents for solution processing. As revealed by both AFM and electron microscopies,...

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

Crystallographic insight-guided nanoarchitectonics of peptide-conjugated naphthalene diimide (NDI) is described. In a bio-inspired approach, non-proteinogenic α-amino isobutyric acid (Aib)- and alanine (Ala)-derived peptides orchestrated the 1D achiral and 2D chiral molecular ordering of NDI, respectively, which resulted in modulation of nanoscale morphology, chiroptical and conductivity proper...

The Journal of Physical Chemistry is published by the American Chemical Society. 1155 Sixteenth Street N.W., Washington, DC 20036 Semiconductor electrodes. IV. Electrochemical behavior of nand p-type silicon electrodes in acetonitrile solutions Daniel Laser, and Allen J. Bard J. Phys. Chem., 1976, 80 (5), 459-466• DOI: 10.1021/j100546a008 • Publication Date (Web): 01 May 2002 Downloaded from ht...