نتایج جستجو برای: nanoscale schottky
تعداد نتایج: 27775 فیلتر نتایج به سال:
functionally gradedpoisson’s ratio structures have been developed for critical protection. in thispaper, the static bending and buckling of fgpr nanoscale beam are studied basedon the nonlocal timoshenko beam model, in which both young’s modulus andpoisson’s ratio are assumed to vary continuously in the thickness direction. byutilizing total potential energy principle, equilibrium equations are...
an investigation was initiated to examine the effects of nanoscale titanium dioxide particles on plant growth and development. in view of the widespread cultivation of canola in iran and in other parts of the globe and in view of the potential influence of titanium on its growth, this plant was chosen as the model system. canola seeds were separately treated with different concentrations of nan...
In this study, effect of immersion time on the electrochemical behaviour of AISI 321 stainless steel (AISI 321) in 0.1 M H 2SO 4 solution under open circuit potential (OCP) conditions was evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Mott–Schottky analysis revealed that the passive films behave as n-type and p-type s...
Abstract Developing selective and coherent polymorphic crystals at the nanoscale offers a novel strategy for designing integrated architectures photonic optoelectronic applications such as metasurfaces, optical gratings, photodetectors, image sensors. Here, direct writing approach is demonstrated to deterministically create 2D materials by locally inducing metallic 1T′‐MoTe 2 on semiconducting ...
In this study, a semi cylindrical capacitive array type liquid interface level measuring sensor is described. The sensor consists of a continuous large semi cylindrical thin metallic plate acting as a common plate of the capacitor and an array of small semi cylindrical thin metallic plates, separated by very small gap distance. All plates are mounted along the outer wall of a cylindrical non co...
The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky c...
This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transm...
The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-re...
Ti-doped nano MgAl2O4 for white emission was synthesized by combustion method. Extrinsic Schottky defects, Al vacancies and Ti4+ dopant in Al sites, which are considered to be responsible for bluish-white emission, were observed by STEM on the surface of Ti-doped nano MgAl2O4 powder. The stabilities of the Schottky defect associates, (TiAl·-VAl''')'', were demonstrated by DFT calculation. The e...
We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemp...
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