copper thin films with nano-scale structure have numerous applications in modern technology.  in this work, cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by dc magnetron sputtering technique at room temperature in pure ar gas. the sputtering time was considered in 4, 8, 12 and 16 min, respectively. the thickness effect on the structural, morpholo...

M 3 (hexahydroxytriphenylene) 2 (M = Ni, Co, Cu; hexahydroxytriphenylene (HHTP)) was uniformly coated onto BiVO 4 thin films via a facile solvothermal process, and the photoelectrochemical performance of /M (HHTP) photoanodes investigated.

High quality manganese oxide thin films with smooth surfaces and even thicknesses have been prepared with a nonaqueous sol-gel process involving reduction of tetraethylammonium permanganate in methanol. Spin-coated films have been cast onto soft glass, quartz, and Ni foil substrates, with two coats being applied for optimum crystallization. The addition of alkali metal cations as dopants result...

Ferroelectric BaTiO3 BTO thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. ...

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

CdTe thin films with 2.8 µm thickness were deposited by electron beam evaporation method. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and atomic force microscopy (AFM) were used to characterize the films. The results of AFM analysis revealed that the CdTe films have uniform surface. CdTe thin films were heat-treated by SnCl2 solution. Structural analysis using XRD s...

Phase formation was studied in ion-irradiated multilayer and coevaporated Ni-20 at. % Al films supported by Cu, MO, and Ni transmission electron microscopy (TEM) grids. Irradiation with either 700-keV Xe or 1.7-MeV Xe, to doses sufficient to homogenize the multilayers 07.5X 1015 cmm2), resulted in the formation of metastable supersaturated y and HCP phases in both film types. Post-irradiation a...

the effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated cds thin films have been investigated. cds thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. x-ray diffraction, scanning electron microscopy, uv-vis-nir spectroscopy and atomic force microscopy were used to character...