Ohmic heating offers an alternating to conventional heating because it simultaneously heats both phases by internal energy generated through electrical energy. In this process heating rate depends upon the electrical conductivity and field strength. By this method a product undergoes a minimum structural damage, retain its nutritional value. This technique gives excellent processed quality prod...

We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H...

Low-loss superconducting rf devices are required when used for quantum computation. Here, we present a series of measurements and simulations showing that conducting losses in the packaging our resonator affect maximum achievable internal quality factors (Qi) thin-film Al quarter-wave resonators with fundamental resonant frequencies varying between 4.9 5.8 GHz. By utilizing different widths gap...

Abstract. A series of calculations and measurements have been made to evaluate the effect of eddy currents in the spherical tokamak ETE (Experimento Tokamak Esférico). Eddy currents occur in the central column of the conventional copper toroidal field magnet, around which the ohmic heating solenoid was tightly wound, and in the continuous wall of the vacuum vessel manufactured from inconel allo...

Central toroidal rotation and impurity transport coe cients have been determined in Alcator C-Mod Ohmic High Con nement Mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3 10 m/s in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely Ohmic H-mode plasmas display many characteristics si...

Three types of two-terminal CdS nanowire devices with distinct current versus voltage characteristics were fabricated by forming Schottky and/or Ohmic contacts in a controlled manner. Argon ion bombardment of CdS nanowires increased the carrier concentration allowing the formation of Ohmic Ti–CdS contacts. Scanning photocurrent microscopy SPCM was used to explore the influence of the contacts o...

We report on transport measurements in a Bi-2212 single crystal with columnar defects parallel to the c-axis. The tilt of the magnetic field away from the direction of the tracks is studied for filling factors f = Bz/B φ < 1. Near the Bose Glass transition temperature TBG, the angular scaling laws are verified and we find the field independent critical exponents ν ′ = 1.1 and z ′ = 5.30. Finall...

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placemen...

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic los...

Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The s...