Neutrino radiation takes a major role in the momentum, heat, and lepton transports in protoneutron stars (PNSs). These diffusive processes affect the growth of magnetorotational instability (MRI) in PNSs. We perform a local linear analysis for the axisymmetric and nonaxisymmetric MRI including the effects of neutrino transports and ohmic dissipation. We find that the MRI can grow even in the mu...

Larger solar cells are preferred for higher power output. However, they produce current and lead to ohmic loss. This loss has prompted manufacturers laser cut into halved cells, resulting in lower current, voltage string‐cells. While these techniques reduce loss, introduce cutting‐edge recombination. The monolithic cell resembles but without requiring cutting the original strings of which saved...

High-volumetric-energy-density lithium-ion batteries require anode material with a suitable redox potential, small surface area, and facile kinetics at both single-particle electrode level. Here family of coarse-grained molybdenum substituted titanium niobium oxides MoxTi1?xNb2O7+y (single crystals 1~2 ?m size) underwent hydrogen reduction treatment to improve electronic conduction was synthesi...

Quality of glazed (G) and non-glazed air-blast frozen rainbow trout (Oncorhynchus mykiss) was evaluated after applying different modern (M: microwave oven; U: ultrasonic; HVEFT: high voltage electrical field; O: ohmic heating) and conventional (S: steam cooking; W: water; R: refrigeration) thawing methods. Glazed frozen samples thawed by modern and conventional methods showed an increase in pro...

A comparison of methods to create Ohmic contacts to semiconductor nanowires NWs and carbon nanotubes CNTs is presented. A Ni/Au lift-off metallization was used to contact GaN and In2O3 NWs and CNTs using electron-beam e-beam or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal,...

The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of fo...

A multi-faceted study on the reduction of ohmic contact resistance to AlN/GaN-based heterostructures is presented. Minimum contact resistance of 0.5 X mm has been achieved by partially etching the AlN barrier layer using a chlorine-based plasma dry-etch prior to ohmic contact metallization. For thin GaNcapped AlN/GaN heterostructures, we find it is necessary to remove the GaN cap in the vicinit...

Abstract Fully integrated low insertion loss micromachined band-pass filters are designed and fabricated on the silicon substrate (ρ = 10–20 cm, εr = 11.9) for UHF applications. Filters are made of silver, which has the highest conductivity of all metals, to minimize the ohmic loss. A detailed analysis for realizing low insertion loss and high out-of-band rejection filters using elliptic magnit...