نتایج جستجو برای: pd soi

تعداد نتایج: 62400  

2017
Xiang Wang Yu Ping Huang Jun Liu Jie Wang

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...

1998
Hyungcheol Shin M. Racanelli Taekeun Hwang D. K. Schroder

This paper presents a new, simple method of measuring the generation lifetime in SOI (silicon-on-insulator) MOSFETS. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across ®nished SIMOX (separation by implantated oxygen) wafers, BESOI (bonded and etchedback SOI) wafers, and UNIBOND wafers. BESOI materi...

2003
Andrew B. Watkins

The El Niño – Southern Oscillation (ENSO) maintained its warm state through the austral spring of 2002, however the Southern Oscillation Index (SOI) remained only weakly negative, with values of –7.6, –7.4 and –6.0 for September, October and November respectively. This resulted in a seasonal mean SOI of –7.0, an increase of 1.5 since the winter season (Jones 2003). The SOI for spring (arguably)...

2001
Chang-Hoon Choi Zhiping Yu Robert W. Dutton

Gate tunneling current in fully depleted, double-gate (DG) silicon-on-insultor (SOI) MOSFETs is characterized based on quantummechanical principles. The gate tunneling current for symmetrical DG SOI with ground-plane ( =1.5 nm and =5 nm) is shown to be higher relative to single-gate (bulk) MOS structure. The tunneling is enhanced as the silicon layer becomes thinner since the thinner silicon la...

2004
N. Sadachika Y. Uetsuji D. Kitamaru H. J. Mattausch M. Miura-Mattausch L. Weiss U. Feldmann S. Baba

We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I-V data, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement...

Journal: :Energies 2021

The effects of two pilot injections on combustion and emissions were evaluated in a single−cylinder turbocharged diesel engine, which operated premixed charge compression ignition (PCCI) modes with multiple heavy exhaust gas recirculation under the low load by experiments simulation. It was revealed that delay start first injection (SOI−P1) or advance second (SOI−P2), respectively, pressure, he...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی اصفهان - دانشکده برق و کامپیوتر 1391

مدارهای نوری توانایی انتقال اطلاعات با سرعتی بسیار بیشتر از مدارهای الکترونیکی معمولی را دارا می باشند. با این وجود، به علت وجود پدیده حد تفرق نور در مدارات و دستگاه های نوری، کوچک سازی و مجتمع سازی آن ها با مشکل جدی روبه رو شده است. یک راه حل برای رفع این مشکل، بکارگیری سیستم های پلاسمونیکی به منظور هدایت سیگنال ها در فرکانس های نوری می باشد. ادوات پلاسمونیکی در حالت کلی از عایق ها و فلزات ناد...

2017
Jeff Chiles Sasan Fathpour

The standard platform for silicon photonics has been ridge or channel waveguides fabricated on silicon-on-insulator (SOI) wafers. SOI waveguides are so versatile and the technology built around it is so mature and popular that silicon photonics is almost regarded as synonymous with SOI photonics. However, due to several shortcomings of SOI photonics, novel platforms have been recently emerging....

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید