نتایج جستجو برای: planar si
تعداد نتایج: 138625 فیلتر نتایج به سال:
An alternative to the standard echo-planar spectroscopic imaging technique is presented, spectroscopic imaging using concentrically circular echo-planar trajectories (SI-CONCEPT). In contrast to the conventional chemical shift imaging data, the sampled data from each set of concentric rings were regridded into Cartesian space. Usage of concentric k-space trajectories has the advantage of requir...
this paper is dedicated to propose an algorithm in order to generate the certain isomers of some well-known fullerene bases. furthermore, we enlist the bipartite edge frustration correlated with some of symmetrically distinct innite families of fullerenes generated by the oered process.
introduction: evaluation of bonding in atomic level, by sem/eds analysis of si atoms, is an exact method for determination of bond strength of metal and porcelain. the purpose of this study was to evaluate the bond strength of one noble alloy and two base metal alloys with and without beryllium. methods and materials: six specimens of each alloy begostar, rexillium iii, wiron 99 (10×10×1mm dime...
Understanding the macrosegregation formed by applying magnetic fields is of high commercial importance. This work investigates how static magnetic fields control the solute and primary phase distributions in four directionally solidified alloys (i.e., Al-Cu, Al-Si, Al-Ni and Zn-Cu alloys). Experimental results demonstrate that significant axial macrosegregation of the solute and primary phases ...
In a comment on our recent letter, Yu first pointed out that there was strong alloying between the Ge dots and Si barrier layers because of the appearance of Si–Ge modes as also observed in SiGe alloys. It is correct that the Ge dot samples reported in our letter have some degrees of alloying due to interdiffusion. This was due to the fact that the samples were grown at a high temperature of 60...
Integral relations to describe the propagation of a TE-wave from an external point source through the two-dimensional medium (plane interface) and the plane-parallel plate are proposed. We discuss three types of waves that contribute to the resulting light field, namely, the propagating waves and the firstand second-type surface waves. The comparison of near-field refractive lenses (SIL, NAIL) ...
In this paper, we discuss the process, layout and device technologies of FinFET to obtain high RF and analog/mixed-signal performance circuits. The fin patterning due to Side-wall transfer (SWT) technique is useful to not only fabricate narrow fin line but also suppress the fin width variation comparing with ArF and EB lithography. The H2 annealing after Si etching is useful for not only to imp...
A stress-induced kinetically-driven morphological instability is of general applicability to driven systems. The effect of stress on the reaction mobility for incorporation into the growing solid couples to stress variations along a perturbed planar growth front, resulting in amplification or decay of the perturbation depending on the sign of the stress. Experimentally we studied a model system...
Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length...
The reflection spectra of composite materials on a base of grooved silicon and grooved silicon infiltrated with nematic liquid crystal (LC) have been calculated using the optimal parameters of a grooved silicon matrix suitable for the infrared range. The grooved silicon structures with different lattice constants (A=16, 12, 8 and 4 μm) have been designed and prepared. An important parameter of ...
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