Initiated chemical vapor deposition (iCVD) is a novel process capable of producing a range of polymeric and multifunctional nanocoatings. The process utilizes hot filaments to drive gas phase chemistry which enables the deposition of true linear polymers rather than the highly crosslinked organic networks often associated with plasma enhanced CVD. Importantly, the object to be coated remains at...

We have studied by small angle X-ray scattering the structural evolution on the atomic and nanoscale of hydrogenated amorphous silicon prepared both by ion implantation and by plasma-enhanced chemical vapor deposition and containing a similar H content. Results show that the initial structure of both samples is homogeneous on the nanoscale. Upon annealing, low-density features on the nanometer ...

Polycrystalline diamond and carbon nanotubes exhibit excellent vacuum field emission properties, characterized by low turn-on voltage and high current density. Their atmospheric field emission and ionization capabilities are reported in this paper. Highly graphitic polycrystalline diamond (HGPD) film was grown in a plasma-enhanced chemical vapor deposition process, and its ability to ionize atm...

This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved w...

Using real-time spectroscopic ellipsometry (RTSE) the evolution of the surface roughness in aSi:H thin-films grown by low-temperature plasma-enhanced chemical vapor deposition (PECVD) has been studied as a function of the hydrogen dilution ratio Rd =[H2]/[SiH4] with 15 ≤ Rd ≤ 60. To describe the roughness evolution, we have used a 3D linearized continuum equation which includes a negative surfa...

Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD) of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles ...

Hydrogenated microcrystalline silicon ðmc Si : HÞ growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the depos...

A common belief proposed by Peierls and Landau that two-dimensional material cannot exist freely in a three-dimensional world has been proved false when graphene was first synthesized in 2004. Graphene, which is the base structure of other carbon materials, has drawn much attention of scholars and researchers due to its extraordinary electrical, mechanical and thermal properties. Moreover, meth...

We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...

In this paper, a kind of multi-disciplinary simulation and design platform for wafer manufacturing process with Chamber system is presented. This platform is developed as an in-house program, with different functional component for multi-disciplinary problems, which can drive the commercial FEM solver with code. There are also management function for user, products, and analysis or optimization...