Abstract Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in nanofabrication. Based on its self-limiting surface reactions, ALD excellent conformality, sub-nanometer thickness control, and good process compatibility. These merits promote the industrial research applications of various fields. This article provides an introduction to highlights semicond...

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The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

We fabricated a new organic-inorganic hybrid superlattice film using molecular layer deposition [MLD] combined with atomic layer deposition [ALD]. In the molecular layer deposition process, polydiacetylene [PDA] layers were grown by repeated sequential adsorption of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet polymerization under a substrate temperature of 100°C. Titanium...

Encapsulation is essential to protect the air-sensitive components of organic light-emitting diodes (OLEDs) such as active layers and cathode electrodes. In this study, hybrid zirconium inorganic/organic nanolaminates were fabricated using remote plasma enhanced atomic layer deposition (PEALD) and molecular layer deposition at a low temperature. The nanolaminate serves as a thin-film encapsulat...

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We...