The reduction of oxides during annealing and growth in low pressure processes is a widely known problem. We hence investigate the influence of mere annealing and of growth in vacuum systems to shed light on the reasons behind the reduction of perovskites. When comparing the existing literature regarding the reduction of the perovskite model material SrTiO3 it is conspicuous that one finds diffe...

The application of either hydroxyapatite (HA) or titanium dioxide (TiO2) as coatings onto existing bioinert materials has been explored as the key route for enhancing the surface properties of hard tissue implant devices. However, it has been proposed that composite HA/TiO2 coatings may provide significant advantages for the application of such surfaces. This work reports on the surface propert...

Experimental annealing of galena samples with known deformation histories shows that this mineral has the necessary properties to be a valuable source of information about low-grade deformational environments. Annealed galena displays recovery and/or recrystallization features dependent upon the type of texture inherited from the tectonic event, which in turn is closely linked to deformation te...

In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stacked elemental layer (SEL) deposition technique in vacuum. The films were prepared at the post-deposition annealing temperature from 100 to 350°C for 15 min duration. The atomic composition of the films was measured by energy dispersive analysis of X-ray (EDAX) method. The films ascertain the compo...

We investigate the surface blistering/exfoliation in H-implanted GaSb (100) substrates. Samples were implanted by 50 keV hydrogen ions with a fluence of 5 × 1016 and 1 1017 ions/cm2 at room temperature. Post-implantation annealing studies carried out up to 300 °C observe blistering. Interestingly, exfoliation over large area was observed for both fluences after post-implantation annealing. High...

This paper addresses the annealing temperature effect on nanostructure and phase transition of copper oxide thin films, deposited by PVD method on glass substrate (at 110 nm thickness) and post annealed at different temperatures (200-400°C) with a flow of 1 cm3s-1 Oxygen. The X-ray diffraction (XRD) was employed for crystallographic and phase analyses, while atomic force m...

Oxygen sensitization and incorporation of ternary lead chalcogenide PbSe 1-x Te x thin films was investigated with two methods: adding oxygen via PbO to the bulk source alloy post-deposition annealing. Characterization composition, structure, morphology these confirmed that they follow Vegard's law for lattice parameter, did not impact parameter. However, changed electrical carrier properties o...

Low-cost and low thermal budget-based spin-coated sol–gel Alumina was explored as a dielectric/passivation layer for graphene field effect transistor (GFET). Post annealing, the crack observed in exactly above channel. The possible mechanism of could be lateral restoring movement due to (i) Thermal Expansion Coefficient (TEC) difference between adjacent layers (ii) shrinkage stress generated du...

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 1000C and 2000C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5x1014 /cm2. This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The shee...