A non-quasi-static compact model well suited for the simulation of electrical behavior printed organic thin-film transistors (OTFTs) is proposed and validated. The based on discretization current continuity equation by using a spline collocation approach while transport in semiconductor described variable range hopping theory. accounts presence parasitic regions that are often found layouts OTF...

This paper describes a method to model thin-film fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs at frequencies where the quasi-static model is no longer valid. The method consists in considering a cascade of several elementary MOSFET transistors or sections and applying the quasi-static analysis to each section. Important second-order effects such as mobility degradation and velocity sa...