Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be...

Retraction of 'Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays' by Bai Sun and Chang Ming Li, Phys. Chem. Chem. Phys., 2015, 17, 6718-6721.

Resistive switching, the change between a high-resistive OFF state and low-resistive ON state, is well known for thin film oxides sandwiched two ion-blocking electrodes. Herein, possibility resistive switching in perovskite-type using Hebb–Wagner polarization setup that uses an reversible electrode investigated. The behavior simulated numerically terms of defect chemical transport model describ...

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affec...

A stochastic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the ...

A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. Th...