نتایج جستجو برای: scattering ellipsometry

تعداد نتایج: 116656  

2013
Mathias Schubert E. Franke T. E. Tiwald J. A. Woollam

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example" (1997). We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wave...

2013
Anil Sudhakar Kurhekar Prakash R Apte

Ex situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effect of liquid-phase hydrofluoric acid (HF) cleaning on Si<100> surfaces for microelectromechanical systems application. The hydrogen terminated (H-terminated) Si surface was realized as an equivalent dielectric layer, and SE measurements are performed. The SE analyses indicate that after a 20-s 100:5 H...

Journal: :Journal of Advanced Science 1993

Journal: :Journal of the Surface Finishing Society of Japan 1989

Journal: :Chemical communications 2011
Debdas Ray Colette Belin Fei Hui Bruno Fabre Philippe Hapiot Dario M Bassani

The formation of covalent C(60) monolayers through [4+2] Diels-Alder cycloaddition between C(60) and anthracene monolayers grafted onto a silicon oxide surface was investigated by ellipsometry, fluorescence and by atomic force microscopy.

2004
Dieter K. Schroder

Contactless measurements are attractive and more commonly used because they do not contaminate the sample and generally do not require sample preparation. After an outline of the more common contactless characterization techniques, I will discuss a few of these in more detail. In particular resistivity or doping density profiling, minority carrier lifetime, stress, temperature, layer thickness,...

Journal: :Applied Physics Letters 2023

Redshift of the absorption onset and amplitude increase in ultraviolet complex dielectric function (DF) corundum-like [Formula: see text]-(Ti x Ga 1− ) 2 O 3 with increasing Ti content is presented. text]-Ga thin film samples alloyed up to text] are grown from plasma enhanced atomic layer deposition. They characterized by spectroscopic ellipsometry, transmission electron microscopy, x-ray photo...

Journal: :Photonics 2021

The determination of optical constants (i.e., real and imaginary parts the complex refractive index (nc) thickness (d)) ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields product nc d) film, while AFM yield its thickness, thereby allowing...

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