نتایج جستجو برای: schottky cell

تعداد نتایج: 1687676  

Journal: :Optics express 2012
Thamani Wijesinghe Malin Premaratne

The conventional analysis of surface plasmon modes on dielectric-metal interfaces requires clearly defining the permittivity discontinuity at the interface. A pivotal assumption of such an analysis is that the formation of the dielectric-metal interface does not change the material properties and the materials forming the interface have identical permittivities before and after the formation of...

Journal: :ACS nano 2015
Hisato Yamaguchi Jean-Christophe Blancon Rajesh Kappera Sidong Lei Sina Najmaei Benjamin D Mangum Gautam Gupta Pulickel M Ajayan Jun Lou Manish Chhowalla Jared J Crochet Aditya D Mohite

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition-metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photoexcitation using correlated scanning photocurrent micro...

2011
Jens Eriksson Fabrizio Roccaforte Sergey Reshanov Stefano Leone Filippo Giannazzo Raffaella LoNigro Patrick Fiorenza Vito Raineri

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...

2014
Richard Lossy Hervé Blanck Joachim Würfl

A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides sealing of the semiconductor. Sputtering is the enabling technology that provides low stress iridium contacts from low damage processing. Patterning of the gate contact is achieved by a subtractive meth...

2005
D. Jiménez S. Roche J. Suñé X. Cartoixà E. Miranda L. S. Froufe-Pérez

At present, an important issue is to dispose of electrical models describing the interplay between the observed phenomenology in CNT-FETs. These models are intended to serve as guidelines for the design and projection of CNT-FET performances. In this work we propose a physics-based model for CNT-FETs for computing the transfer and output characteristics. The model captures the observed phenomen...

Journal: :Geometric And Functional Analysis 2000

Journal: :CoRR 2012
James S. Wolper

The Information-Theoretic Schottky Problem treats the period matrix of a compact Riemann Surface as a compressible signal. In this case, the period matrix of a smooth plane curve is characterized by only 4 of its columns, a significant compression.

2006
Yong Hou Ying Zhou

Let H be the hyperbolic 3-space. A subgroup Γ of PSL(2,C) = Iso(H) is called a Kleinian group if it is discrete. Let x ∈ H. The orbit of x under action of Γ is denoted by Γx. The limit set ΛΓ of Γ is definited as ΛΓ = Γx ∩ ∂H. By definition, ΛG is smallest closed Γ-invariant subset of ∂H. The group Γ is called second kind if ΛΓ 6= ∂H, otherwise it is said to be first kind. The set ΩΓ = ∂H 3 − Λ...

2010
S. Appel O. Boine-Frankenheim

For the upgrade of the SIS-18 synchrotron it is of importance that the initial momentum spread of the injected coasting beam does not exceed the limit set by the rf bucket area. The lower limit is determined by microwave instabilities which cause a sudden increase of the momentum spread below a threshold momentum spread. For a coasting Ar beam in the SIS-18 the measured momentum spread as a fun...

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